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ADVANCE
01.08.28
Features * Low voltage of +3.3 V single power supply * 27 k high transimpedance * Typical 130 MHz broad bandwidth * 32 dB high gain * 3 dBm large optical input * Over 40 dB wide dynamic range * Differential output
F0100109B
3.3 V /5V 156 Mb/s Receiver
Transimpedance Amplifier
Applications * Preamplifier of an optical receiver circuit for OC-3/STM-1 (156 Mb/s)
Functional Description The F0100109B is a stable GaAs integrated transimpedance amplifier capable of 32 dB gain at a typical 130 MHz 3 dB-cutoff-frequency, making it ideally suited for a 156 Mb/s optical receiver circuit, for example, OC-3/STM-1, instrumentation, and measurement applications. The integrated feedback loop design provides broad bandwidth and stable operation. The F0100109B typically specifies a high transimpedance of 27 k(Rs=RL=50 ) with a wide dynamic range of over 40 dB. It also provides a large optical input overload of more than 3 dBm. Furthermore, it can operate with a low supply voltage of single +3.3 V. It features a typical dissipation current of 27 mA. Only chip-shipment is available for all product lineups of GaAs transimpedance amplifiers, because the packaged preamplifier can not operate with the maximum performance owing to parasitic capacitance of the package.
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
Absolute Maximum Ratings
F0100109B
Ta=25 C, unless specified
Parameter Supply Voltage Supply Current Input Current Ambient Operating Temperature Storage Temperature Symbol VDD IDD IIN Ta Tstg Value VSS-0.5 to VSS+4.0 50 3 -40 to +90 -50 to +125 Units V mA mA C C
Recommended Operating Conditions Ta=25 C, VDD=+3.3 V, VSS=GND, unless specified
Value Parameter Supply Voltage Ambient Operating Temperature Input Capacitance Symbol Min. VDD Ta CPD 3.1 0 Max. 3.6 85 0.5 V C pF Units
Electrical Characteristics Ta=25 C, VDD=3.3 V, VSS= GND, unless specified
Value Parameter Supply Current Gain(Positive) Gain(negative) -3dB High Frequency Cut-off (positive) -3dB High Frequency Cut-off (negative) Input Impedance Trans-Impedance(positive) Trans-Impedance(negative) Output Voltage(positive) Output Voltage(negative) Input Voltage Equivalent Input Noise Current Density AGC time constant
*1 ZTP, N= (R I +50) 2 x10
Symbol IDD S21P S21N FCP FCN RI ZTP * ZTN * VOP VON VI Inoise tagc
S21P,N 20
Test Conditions Min. DC PIN=-50dBm f=1MHz, RL=50 PIN=-50dBm f=1MHz, RL=50 PIN=-50dBm RL=50 PIN=-50dBm RL=50 f=1MHz f=1MHz RL=50 f=1MHz RL=50 DC DC DC f=10MHz Cout=2200pF 19.0 29 29 80 80 550 1.6 1.6 0.8 Typ. 27.0 32 32 130 130 800 27 27 2.5 2.5 0.97 0. 7 100 Max. 40.0 1100 3.2 3.2 1.1 -
Units mA dB dB MHz MHz K K V V V pA/Hz1/2 sec
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
Block Diagram
VDD
F0100109B
OUT IN OUT
Rf AGC
CAP
Cout VSS
VDD VSS IN OUT OUT CAP
Supply Voltage Supply Voltage Input Output Output Connect outer Capasitance
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
Die Pad Assignments
F0100109B
(12)
(11)
(10)
(9)
(8)
(13)
(7)
(14)
(6)
(5) (1) (2) (3) (4)
No. (1) (2) (3) (4) (5) (6) (7) (8) (9)
Symbol VDD3.3 VDD5.0 OUT VSS OUT VSS OUT VSS OUT
Center Coordinates(m) (75,140 ) (395,75) (555,75) (715,75) (715,235) (715,395) (715,555) (715,715) (555,715)
No. (10) (11) (12) (13) (14)
Symbol VSS VDD3.3 CAP VSS IN
Center Coordinates(m) (395,715) (235,715) (75,715) (75,555) (75,395)
O A
(0,0) (790,790)
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
Test Circuits 1) AC Characteristics
F0100109B
50 Pin=-50 dBm f=300 kHz~3 GHz IN
CAP
Network Analyzer
50
VDD DUT VSS
OUT Switch OUT 50
*
Prober * PSPL 5501
2) Sensitivity Characteristics
VPD
3.3V 0.022F
E/O Converter
Optical Attenuater
VCC PD DUT
3.3V 0.022F
Pulse Pattern Generator
CLK 0.022F Comparator SEI F0300232Q
Bit Error Rate Tester
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
Examples of AC Characteristics
F0100109B
(1) Gain (S21P) Ta=25 C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 , 300 kHz-3 GHz
39 36 33 S21 [dB] 30 27 24 21 1 10 100 1000
Frequency [MHz] (2) Gain (S21N) Ta=25 C, VDD=+3.3 V, VSS=GND, Pin=-50 dBm, RL=50 , 300 kHz-3 GHz
39 36 33 S21 [dB] 30 27 24 21 1 10 100 1000
Frequency [MHz]
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
(3) Input Noise Current Density & Transimpedance
F0100109B
W PR NT NG W PRIINTIING NO NO
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
Typical Bit Error Rate
F0100109B
PRBS 223-1, Ta=25 C, VDD=3.3 V, VSS=GND, RL=50
10-4
Bit Error Rate
10-6
10-8 10-10 10-12
155.6Mb/s NRZ PRB223 -1 Mark Ratio=1/2
-44
-42
-40
-38
-36
Average Received Power [dBm]
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
General Description
F0100109B
A transimpedance amplifier is applied as a pre-amplifier which is an amplifier for a faint photo-current from a PIN photo diode (PD). The performance in terms of sensitivity, bandwidth, and so on, obtained by this transimpedance amplifier strongly depend on the capacitance brought at the input terminal; therefore, "typical", "minimum", or "maximum" parameter descriptions can not always be achieved according to the employed PD and package, the assembling design, and other technical experts. This is the major reason that there is no product lineup of packaged transimpedance amplifiers. Thus, for optimum performance of the transimpedance amplifier, it is essential for customers to design the input capacitance carefully. Hardness to electro-magnetic interference and fluctuation of a power supply voltage is also an important point of the design, because very faint photo-current flows into the transimpedance amplifier. Therefore, in the assembly design of the interconnection between a PD and a transimpedance, noise should be taken into consideration. Low Voltage Operation The F0100109B features a single 3.3 V supply operation, which is in great demand recently, because most of logic IC's operate with the supply voltage of 3.3 V. The analog IC's with a single 3.3 V supply for use in fiber optic communication systems are offered by only SEI. Recommendation SEI basically recommends the F08 series PINAMP modules for customers of the transimpedance amplifiers. In this module, a transimpedance amplifier, a PD, and a noise filter circuit are mounted on a TO-18-can package hermetically sealed by a lens cap, having typically a fiber pigtail. The F08 series lineups are the best choice for customers to using the F01 series transimpedance amplifiers. SEI's F08 series allows the customers to resolve troublesome design issues and to shorten the development lead time. Noise Performance The F0100109B based on GaAs FET's shows excellent low-noise characteristics compared with IC's based on the silicon bipolar process. Many transmission systems often demand superior signal-to-noise ratio, that is, high sensitivity; the F0100108B is the best choice
3.3 V / 5V 156 Mb/s Transimpedance Amplifier
F0100109B
for such applications. The differential circuit configuration in the output enable a complete differential operation to reduce common mode noise: simple single ended output operation is also available. Die-Chip Description The F0100109B is shipped like the die-chip described above. The die thickness is typically 280 m 20 m with the available pad size uncovered by a passivation film of 95 m square. The material of the pads is TiW/Pt/Au and the backside is metalized by Ti/Au. Assembling Condition SEI recommends the assembling process as shown below and affirms sufficient wire-pull and die-shear strength. The heating time of one minute at the temperature of 310 C gave satisfactory results for die-bonding with AuSn performs. The heating and ultrasonic wirebonding at the temperature of 150 C by a ball-bonding machine is effective. Quality Assurance For the F01 series products, there is only one technically inevitable drawback in terms of quality assurance which is to be impossible of the burn-in test for screening owing to dieshipment. SEI will not ship them if customers do not agree on this point. On the other hand, the lot assurance test is performed completely without any problems according to SEI's authorized rules. A microscope inspection is conducted in conformance with the MIL-STD883C Method 2010.7. Precautions Owing to their small dimensions, the GaAs FET's from which the F0100109B is designed are easily damaged or destroyed if subjected to large transient voltages. Such transients can be generated by power supplies when switched on if not properly decoupled. It is also possible to induce spikes from static-electricity-charged operations or ungrounded equipment.
Electron Device Department

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